姓名 廖宝臣 职称 教授
个人简介
性别：男 籍贯：四川 学历: 博士研究生 学位: 博士
廖宝臣（博士/教授），博士研究生学历，现任betvictot官网教授。获江苏特聘教授以及特别资助，新加坡国立大学博士全额奖学金，新加坡国立大学员工成就奖, 杰出领导奖以及特殊成就奖，新加坡国立大学工程学院图书奖，FIRA 机器人世界杯足球世界冠军等荣誉。本科与博士均毕业于新加坡国立大学。毕业后在新加坡国立大学与新加坡太阳能研究所工作6年多，历任首席研究员兼实验室经理，高端制造小组组长。拥有10余年半导体与光伏研发经验，在ALD，先进电池技术和新材料等领域获得过新加坡政府和工业界数个千万级科研项目。在国际知名的物理和材料期刊发表论文40余篇。在光伏领域拥有多项原创技术。现任betvictot官网教授，研究领域包括微电子，新能源，先进光伏器件，材料以及高端装备技术等。最新的PE-TOPCon研究成果多次入选由太阳能之父马丁格林教授主编的光伏头部期刊PIP 2023年的封面推荐技术。多项研究成果成功产业化并成为市场的主流技术。
专业研究领域
新能源，高端装备，材料，微电子，太阳能电池
学术论文（选填）
[1] B. Liao, W. Wu, R. J. Reuben, X. Wu, S. Ma, Q. Wang, Y. Wan, X. Su, W. Shen, X. Li, W. Li, G. Xing and B. Hoex, “Atomic scale controlled tunnel oxide enabled by a novel industrial tube-based PEALD technology with demonstrated commercial TOPCon cell efficiencies > 24%”, Progress in Photovoltaics: Research and Applications, 31,220-229 (2023).
[2] B. Liao, X. Wu, W. Wu, C. Liu, S. Ma, S. Wang, T. Xie, Q. Wang, Z. Du, W. Shen, X. Li, W. Li and B. Hoex, “Tube-type Plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for industry with demonstrated cell efficiencies > 24%”, Progress in Photovoltaics: Research and Applications, 31, 52-61 (2023).
[3] S. Ma, B. Liao, F. Y. Qiao, D. Ding, C. Gao, Z. P. Li, R. Tong, X. Y. Kong and W. Z. Shen, “24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon”, Solar Energy Materials and Solar Cells, 257, 112396 (2023).
[4] L. Zhu, S. Zou, M. Ni, J. Ding, C. Wu, Z. Lu, Y. Zeng, X. Ye, X. Wang, R. Fan, H. Sun, B. Liao, Y. Xu, M. Shen and X. Su, “Ultrafast random-pyramid texturing for efficient monocrystalline silicon solar cells”, Solar RRL, 2200204, (2022).
[5] J. Ding, S. Zou, L. Shen, J. Choi, J. Cui, D. Yuan, C. Wu, Z. Lu, Y. Zeng, R. Fan, Y. Xu, B. Liao, M. Shen and X. Su, “Improvement of light trapping in bifacial PERC silicon solar cells by optimizing the rear surface morphology”, ACS Applied Energy Materials, 5, 5875 (2022).
[6] B. Liao, J. Ge, X. Wu, Q. Wang, R. J. Yeo and Z. Du, “Unlocking the potential of boronsilicate glass passivation for industrial tunnel oxide passivated contact solar cells”, Progress in Photovoltaics: Research and Applications, 30, 310 (2022).
[7] B. Liao, N. Dwivedi, Q. Wang, R. J. Yeo, A. G. Aberle, C. S. Bhatia and A. Danner, “A Comprehensive Fundamental Understanding of Atomic Layer Deposited Titanium Oxide Films for c-Si Solar Cell Applications”, IEEE Journal of Photovoltaics, 11, 319 (2021).
[8] N. Dwivedi, C. Dhand, E. C. Anderson, R. Kumar, B. Liao, R. J. Yeo, R. Khan, J. D. Carey, M. S. M. Saifullah, S. Kumar, H. K. Malik, S. A. R. Hashmi, A. K. Srivastava, S. K. R. S. Sankaranarayanan, R. Stangl, S. Duttagupta, “Solution Processable High Performance Multiwall Carbon Nanotube–Si Heterojunctions”, Advanced Electronic Materials, 6, 2000617 (2020).
[9] N. Dwivedi, R. J. Yeo, H. R. Tan, R. Stangl, A. G. Aberle, C. S. Bhatia, A. Danner and B. Liao*, “Evidence for Chemicals Intermingling at Silicon/Titanium Oxide (TiOx) Interface and Existence of Multiple Bonding States in Monolithic TiOx”, Advanced Functional Materials, 28, 1707018 (2018).
[10] G. Kaur, N. Dwivedi, X. Zheng, B Liao, L. Z. Peng, A. Danner, R. Stangl and C. S. Bhatia, “Understanding Surface Treatment and ALD AlOx Thickness Induced Surface Passivation Quality of c-Si Cz Wafers”, IEEE Journal of Photovoltaics, 7, 1224 (2017).
[11] Z. Xin, S. Duttagupta, M. Tang, Z. Qiu, B. Liao, A. G. Aberle and R. Stangl, “An improved methodology for extracting the interface defect density of passivated silicon solar cells”, IEEE Journal of Photovoltaics, 6, 1080 (2016).
[12] B. Liao, B. Hoex, K. D. Shetty, P. K. Basu and C. S. Bhatia, “Passivation of Boron-Doped Industrial Silicon Emitters by Thermal Atomic Layer Deposited Titanium Oxide”, IEEE Journal of Photovoltaics, 5, 1062 (2015).
[13] B. Liao, B. Hoex, A. G. Aberle, D. Chi, and C. S. Bhatia, “Excellent c-Si passivation by low-temperature atomic layer deposited titanium oxide”, Applied Physics Letters, 104, 253903 (2014).
[14] B. Liao, R. Stangl, F. Ma, Z. Hameiri, T. Mueller, D. Chi, A. G. Aberle, C. S. Bhatia, and B. Hoex, “Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3”, Journal of Applied Physics, 114, 094505 (2013).
[15] B. Liao, R. Stangl, F. Ma, T. Mueller, F. Lin, A.G. Aberle, C.S. Bhatia, and B. Hoex, “Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation”, Journal of Physics D: Applied Physics, 46, 385102 (2013).
[16] B. Liao, R. Stangl, T. Mueller, F. Lin, C.S. Bhatia and B. Hoex, “The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3”, Journal of Applied Physics, 113, 024509 (2013).