姓名 张雪峰     职称 副教授

专业研究领域

半导体器件研究，聚焦于隧穿场效应晶体管的低亚阈值特性和高开态电流方面的研究工作，提出了一种能增大开态电流的隧穿场效应晶体管结构；微波和毫米波天线设计研究；GaN HEMT 可靠性研究；高迁移率high-k Ge-MOSFET工艺制备和载流子输运理论研究。

学术论文（选填）

1.      天线相关论文

(1)    Xue-Feng Zhang; Shuai-Hua Cao; Jian-Xin Chen ;Novel Millimeter-Wave Bandwidth-Controllable Filtering Antenna Basedon CompositeESPPs-SIWStructure,IEEETransactionsonAntennasand Propagation, 2021, 69(11): 7924-7929

(2)J.Chen;S.Cao;Xue-FengZhang;SPPs-SharedDual-Band AntennawithLargeFrequencyRatio,IEEEAccess,2020,8(2):29132-29139

(3)Xue-FengZhang;JingFan;Jian-XinChen;Bandwidth-controllableband-stopfilterusingspoofsurface plasmonpolaritons,International Journal of RF and Microwave Computer-Aided Engineering, 2020,30(1): e21923

(4)   Xue-FengZhang;Fan,Jing;Chen,JianXin;HighGainand High-EfficiencyMillimeter-WaveAntennaBasedonSpoofSurfacePlasmon Polaritons,IEEETransactionsonAntennasandPropagation,2019,67(1): 687-691

(5)  Xue-FengZhang;Sun,WenJian;Chen,JianXin;Millimeter-Wave ATSAntennaWithWideband-EnhancedEndfireGainBasedonCoplanar Plasmonic Structures, IEEE Antennas and Wireless PropagationLetters, 2019, 18(5): 826-830

(6)Xue-FengZhang；Jian-XinChen；Millimeter-waveEndfireAntenna BasedonSpoofSurfacePlasmonPolaritons,会议CSQRWC2018(2018,9徐州)

(7)Xue-FengZhang；Jian-XinChen；Rui-FengGao；ChenXu&Zhi-Hua Bao ； Differential surface plasmon polaritons transmission linewith controllablecommonmoderejection，ScientificReports，2017volume7, Article number: 2974

2. 半导体器件和工艺相关论文

（1）X.F.Zhang;L.Wei;L.Wang;J.Liu;J.Xu;Gatelengthrelated transfercharacteristicsofGaN-basedhighelectronmobilitytransistors. Appl. Phys. Lett., 2013,102:113501

（2）ZhangXue-Feng(张雪锋),WangLi(王莉),LiuJie(刘杰)，WeiLai (魏崃), Xu Jian (许键); Electrical characteristics of AlInN/GaNHEMTs undercryogenicoperation,ChinesePhysicsB,2013,22(1):17202-017202

（3）X.F.Zhang;L.Wei;ProposedaTunnelField-EffectTransistor with High ON-State Current by Using Full Depleted SourceStructure, Journal of Surfaces and Interfaces of Materials, 2013,1:189–192

（4）L.Wang;X.F.Zhang;G.J.You;F.Xiong;L.X.Liang;Y.Hu; A.Chen;J.Liu;J.Xu;ModelingtheBackGateEffectsofAlGaN/GaNHEMTs, Journal of Computational Electronics，2014, 13(4):872-876

（5）张雪锋, 王国军, 顾春德, 郭兴龙,一种感应ＰＮ结隧穿场效应晶体 管. 固体电子学研究与进展, 2015,35(5):429-432

（6）J.P.Xu;X.F.Zhang;C.X.Li;P.T.Lai,etal;ImprovedElectrical Properties of Ge p-MOSFET with HfO2 Gate Dielectric by usingTaOxNy Interlayer, IEEE Electron Device Lett., 2008, 29(10):1155-1158

(7)X.F.Zhang;J.P.Xu;C.X.Li;P.T.Lai,etal.ImprovedElectrical Properties of Ge Metal-Oxide-Semiconductor Capacitor withHfTa-based Gate dielectric by using TaOxNy interlayer, Appl. Phys. Lett.,2008, 92:292602

（8）X.F.Zhang；J.P.Xu；P.T.Lai；C.X.Li；APhysicalModelon Scattering at High-k Dielectric/SiO2 Interface of SiGe p-MOSFETs,IEEE Trans. Electron Device, 2007,54(11):3097-3102

（9）X.F.Zhang;J.P.Xu;P.T.Laietal.Effectofinterface-roughness scatteringonmobilitydegradationinSiGep-MOSFETswithahigh-k/SiO2 gate stack, Chinese Physics, 2007, 16(12):3820-3826

（10）X.F.Zhang;J.P.Xuetal.Modelingofscatteringathigh-k dielectric/SiO2interfaceofstrainedSiGeMOSFETs,inICSICT-2006:2006 8th International Conference on Solid-State and Integrated    Circuit Technology, Proceedings, 2006, p. 1343-1345.

（11）张雪锋，徐静平等. “应变Si1-xGexpMOSFET沟道空穴低场迁移率模 型,” 半导体学报, vol.27(11), 2006, p.2000-2004.

 3. 授权发明专利

（1）张雪锋，陈建新，张国安，张士兵，魏崃，王志亮，尹海宏,一种隧穿 场效应晶体管,2015.7.29，中国，ZL201310083020.5

（2）张雪锋; 曹帅华; 陈建新; 杨汶汶; 唐慧; 秦伟; 陆清源 ;一种基于 等离子体激元的带宽可控毫米波滤波器, 2022-04-15, 中国,CN202110315525.4

（3）张雪锋; 曹帅华; 陈建新 ;一种表面等离子体激元结构共享大频率比 双频段天线, 2021-8-3, 中国,ZL201911316392.1

（4）张雪锋; 陈建新; 孙闻剑; 陆清源 ;一种基于等离子体激元的宽带天 线, 2021-1-26, 中国,ZL201910074714.X

（5）张雪锋; 陈建新; 范进; 杨汶汶; 秦伟; 陆清源 ;一种基于表面等离 子体激元的毫米波天线, 2020-2-21, 中国, ZL201810242556.X

 主要科研项目 

1. 国家自然科学基金委员会, 面上项目, 62271271, 基于谐振器复用的微波 功能集成天线研究, 2023-01-01 至 2026-12-31, 53万元, 在研,参与

2.南通市关键技术研究项目：基于人工等离子体波的微波和毫米波低损耗传 输线研究（GY22016015），2018.9-2020.9,20万，已结题，主持