姓名 葛梅 职称 副教授
个人简介
女,江苏南通人,2014年6月于江betvictot官网学取得工学学士学位,2019年6月于南京大学电子科学与工程学院取得工学博士学位,2017年9月至12月于帕多瓦大学访学。2020年获江苏省双创博士。
专业研究领域
第三代半导体氮化镓电力电子器件;氧化镓基功率器件
学术论文
1. Ge Mei, Li Yi, Zhu youhua, Chen dunjun, Wang Zhiliang, Tan shuxin, Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga2O3 back barrier, Journal of physics D-Applied Physics, 2022, 55(6): 065104.
2. Ge Mei, Li Yi, Zhu youhua, Chen dunjun, Wang Zhiliang, Tan shuxin, Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate beta-Ga2O3/p-GaN structure, Journal of physics D-Applied Physics, 2021, 54(35): 355103.
3. Ge Mei, Li Yi, Zhu youhua, Chen dunjun, Wang Zhiliang, Tan shuxin, An improved design for e-mode AlGaN/GaN HEMT with gate stack beta-Ga2O3/p-GaN structure, Journal of applied physics, 2021, 130(3):035703.
4. 葛梅,李毅,王志亮,朱友华,p型栅结构氮化镓基高电子迁移率晶体管结构优化,betvictot官网学报,2021,v.20, No. 77(02): 57-61+68.
5. Ge Mei, Ruzzarin Maria, Chen dunjun, Lu hai, Yu xinxin, Zhou jianjun, De Santi Carlo, Zhang Rong, Zheng youdou, Meneghini Matteo, Meneghesso Gaudenzio, Zanoni Enrico, Gate reliability of p-GaN gate AlGaN/GaN High Electron Mobility Transistors, IEEE Electron Device Letters, 2019, 40(3):379-382.
6. Ge Mei, Cai Qing, Zhang Baohua, Chen dunjun, Hu liqun, Xue junjun, Lu hai, Zhang Rong, Zheng youdou, Effects of the trap level in the unintentionally doped GaN buffer layer on optimized p-GaN gate AlGaN/GaN HEMTs, Physica status solidi A-Applications and materials science, 2018, 215(2):1700368.
7. Ge Mei, Cai Qing, Zhang Bao-Hua, Chen Dun-jun, Xue Jun-Jun, Lu Hai, Zhang Rong, Zheng You-Dou, Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer, Chinese physics B, 2019, 28(10): 107301.
主要科研项目
1、p型栅结构GaN基HEMT器件高温电学特性物理模型基础研究,国家自然科学基金青年项目,24万,2021.01-2023.12;
2、用于饮用水有害含氧酸根阴离子监测的AlInN/GaN异质结构传感器研究,南通市科技计划项目,3万,2019.07-2021.07;
3、Ga2O3/p-GaN栅结构GaN基HEMT器件高温电学特性物理模型基础研究,南京大学固体微结构实验室开放课题,3万,2022.04-2024.04
讲授课程
集成电路原理与设计、电子设计自动化、集成电路原理
指导研究生情况
2022年取得学硕和专硕导团队格。